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Two‐dimensional metastable magnetic semiconductor structures
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5.We conclude that the heretofore hypothetical zinc‐blende MnSe (with a thickness of tens of unit cells or more) is antiferromagnetic based on the behavior of barriers of (Zn,Mn)Se and MnSe grown in various quantum well structures. For Mn mole fractions of zinc‐blende (Zn,Mn)Se is paramagnetic, whereas at larger Mn concentrations, now extended to the magneto‐optical behavior of the MBE grown ternary crystals suggests it is an antiferromagnetic semiconductor. In addition bulk crystals of MnSe having the NaCl crystal structure are known to be antiferromagnetic.
6.The thin layers of (Zn,Mn)Se were grown with the same Mn and Se fluxes as the thin MnSe layers, but with the addition of the Zn flux; hence, the growth rate increased. In all cases the thin layers were grown using the shortest time interval available with the shutter controller.
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