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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
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10.1063/1.96549
/content/aip/journal/apl/48/5/10.1063/1.96549
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/5/10.1063/1.96549
/content/aip/journal/apl/48/5/10.1063/1.96549
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/content/aip/journal/apl/48/5/10.1063/1.96549
1986-02-03
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/5/10.1063/1.96549
10.1063/1.96549
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