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Measurement of the low‐field electron mobility and compensation ratio profiles in GaAs field‐effect transistors
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10.1063/1.96521
/content/aip/journal/apl/48/6/10.1063/1.96521
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/6/10.1063/1.96521
/content/aip/journal/apl/48/6/10.1063/1.96521
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/content/aip/journal/apl/48/6/10.1063/1.96521
1986-02-10
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Measurement of the low‐field electron mobility and compensation ratio profiles in GaAs field‐effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/48/6/10.1063/1.96521
10.1063/1.96521
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