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Low‐loss electron images of uncoated photoresist in the scanning electron microscope
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12.The sample was provided by M. Hatzakis. The pattern was exposed in 3‐μm‐thick photoresist by contact printing using a Hg arc source. The photoresist was AZ‐1350J and the developer was AZ developer. These are registered trademarks of the Azoplate Division of American Hoechst Corp., Somerville, NJ 08876. The material was supplied by Shipley Co., Newton, MA.
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