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Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
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10.1063/1.97556
/content/aip/journal/apl/49/13/10.1063/1.97556
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/13/10.1063/1.97556
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/content/aip/journal/apl/49/13/10.1063/1.97556
1986-09-29
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/13/10.1063/1.97556
10.1063/1.97556
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