In/GaAs reaction: Effect of an intervening oxide layer
1.Fabrication of ohmic contacts to n‐GaAs is reviewed by A. Piotrowska, A. Guivarch, and G. Pelous, Solid State Electron. 26, 179 (1983).
2.J. M. Woodall, J. L. Freeouf, G. D. Pettit, T. Jackson, and P. Kirchner, J. Vac. Sci. Technol. 19, 626 (1981).
3.A. A. Lakhani, J. Appl. Phys. 56, 1888 (1984).
4.A. A. Lakhani, Mater. Lett. 2, 508 (1984).
5.T. Sands, V. G. Keramidas, R. Gronsky, and J. Washburn, Thin Solid Films 136, 105 (1986).
6.T. Sands, V. G. Keramidas, A. J. Yu, K. M. Yu, R. Gronsky, and J. Washburn, J. Mater. Res. (in press).
7.T. Sands, Mater. Res. Soc. Symp. Proc. 62, (1986). (in press).
8.R. W. G. Wyckoff, “Crystal Structures,” Krieger, Malabar, FL, p. 18 1982.
9.T. Sands, J. Washburn, and R. Gronsky, Sol. Energy Mater. 10, 349 (1984).
10.B. de Cremoux, P. Hirtz, and J. Ricciardi, Inst. Phys. Conf. Ser. No. 56, 115 (1981).
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Article metrics loading...
Full text loading...
Most read this month
Most cited this month