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Compositional profile of the amorphous silicon/nitride interface studied with Rutherford backscattering
1.A. J. Snell, K. D. Mackenzie, W. E. Spear, P. G. LeComber, and A. J. Hughes, Appl. Phys. A 24, 357 (1981).
2.H. C. Tuan, M. J. Thompson, N. M. Johnson, and R. A. Lujan, IEEE Electron Device Lett. EDL‐3, 357 (1982).
3.B. Abeles and T. Tiedje, Phys. Rev. Lett. 51, 2003 (1983).
4.N. Ibaraki and H. Fritzsche, Phys. Rev. B 30, 5791 (1984).
5.J. C. Knights, in The Physics of Hydrogenated Amorphous Silicon I, edited by J. D. Joannopoulis and G. Lucovsky (Springer, Berlin, Heidelberg, 1984), p. 39.
6.C. C. Tsai, J. C. Knights, R. A. Lujan, B. Wacker, B. L. Stafford, and M. J. Thompson, J. Non‐Cryst. Solids 59&60, 731 (1983).
7.R. A. Street and M. J. Thompson, Appl. Phys. Lett. 45, 769 (1984).
8.W. K. Chu, J. W. Mayer, and M.‐A. Nicolet, Backscattering Spectrometry (Academic, New York, 1978), Chaps. 1 and 6.
9.J. R. Abelson and T. W. Sigmon, in Materials characterization, edited by N. W. Cheung and M.‐A. Nicolet (Materials Research Society, Pittsburgh, PA, 1986), Vol. 69 of the Materials Research Society Symposia Proceeding, p. 275.
10.J. S. Williams and W. Moller, Nucl. Instrum. Methods 157, 213 (1978).
11.Y. Tamminga, M. F. C. Willemsen, F. H. P. M. Habraken, and A. E. T. Kuiper, Nucl. Instrum. Methods 200, 499 (1982).
12.C. C. Tsai, R. A. Street, F. A. Ponce, and G. B. Anderson, in Materials Issues in Amorphous Semiconductor Technology, edited by D. Adler, Y. Hamakawa, and A. Madan (Materials Research Society, Pittsburgh, PA, 1986), Vol. 70 of the Materials Research Society Symposia Proceeding, p. 351.
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