Full text loading...
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
X‐ray photoemission core level determination of the GaSb/AlSb heterojunction valence‐band discontinuity
1.J. Tersoff, Phys. Rev. B 30, 4874 (1984);
1.J. Tersoff, Phys. Rev. Lett. 56, 2755 (1986).
2.G. Margaritondo, Phys. Rev. B 31, 2526 (1985).
3.R. S. Bauer, P. Zurcher, and H. W. Sang, Jr., Appl. Phys. Lett. 43, 663 (1983).
4.For a review see G. Duggan, J. Vac. Sci. Technol. B 3, 1224 (1985).
5.J. R. Waldrop, S. P. Kowalczyk, R. W. Grant, E. A. Kraut, and D. L. Miller, J. Vac. Sci. Technol. 19, 573 (1981).
6.C. G. Van de Walle and R. M. Martin, Proceedings of the Thirteenth Conference on Physical and Chemical Semiconductor Interfaces (AIP, New York, 1986);
6.J. Vac. Sci. Technol. B 4, 1055 (1986).
7.J. O. McCaldin, T. C. McGill, and C. A. Mead, Phys. Rev. Lett. 36, 56 (1976);
7.J. O. McCaldin, T. C. McGill, and C. A. Mead, J. Vac. Sci. Technol. 13, 802 (1976).
8.M. Kodama, J. Hasegawa, and M. Kimata, J. Electrochem. Soc. 132, 659 (1985).
9.For example, see A. D. Katnani and G. Margaritondo, Phys. Rev. B 28, 1944 (1983);
9.or E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. B 27, 1965 (1983).
10.Anomalously large shifts in the core level binding energy and line shape distortions were observed for submonolayer gold coverages due to metal clustering and/or reaction with the epilayers. With increasing gold coverage, the core level binding energies and line shapes stabilized. The reported data all reflect this thick gold limit.
11.L. Ley, R. A. Pollak, F. R. McFeely, S. P. Kowalczyk, and D. A. Shirley, Phys. Rev. B 9, 600 (1974).
12.S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969), p. 397.
13.N. J. Shevchik, J. Tejeda, and M. Cardona, Phys. Rev. B 9, 2627 (1974).
14.R. L. Johnson, J. H. Fock, L. Ley, and M. Cardona, Proceedings of the 17th International Conference on the Physics of Semiconductors (Springer, New York, 1984), p. 1239.
15.It should be noted that there are two potential sources of error which are not included in the quoted value of First, there is a systematic error associated with the literature values of the Schottky barrier heights shown in Table I, which is estimated to be Second, band bending has been neglected, though this effect should be small for the moderate doping levels of our samples In addition, due to our instrumental resolution, no broadening of the Ga 3d and Al 2p core level peaks was observed in the spectra from interface bonding as compared to the pure binaries.
16.E. E. Mendez, C. A. Chang, H. Takaoka, L. L. Chang, and L. Esaki, J. Vac. Sci. Technol. B 1, 152 (1983).
17.P. Voisin, C. Delalande, G. Bastard, M. Voos, L. L. Chang, A. Segmuller, C. A. Chang, and L. Esaki, Superlattices and Microstructures 1, 155 (1985).
18.C. Tejedor, J. M. Calleja, F. Meseguer, E. E. Mendez, C. A. Chang, and L. Esaki, Phys. Rev. B 32, 5303 (1985).
19.N. Naganuma, Y. Suzuki and H. Okamoto, Int. Symp. GaAs and Related Compounds, Inst. Phys. Conf. Ser. No. 63, 125 (1981).
20.C. G. Van de Walle and R. M. Martin (private communication).
Article metrics loading...