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Characterization of individual electron traps in amorphous Si by telegraph noise spectroscopy
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10.1063/1.97436
/content/aip/journal/apl/49/17/10.1063/1.97436
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/17/10.1063/1.97436
/content/aip/journal/apl/49/17/10.1063/1.97436
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/content/aip/journal/apl/49/17/10.1063/1.97436
1986-10-27
2014-10-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of individual electron traps in amorphous Si by telegraph noise spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/17/10.1063/1.97436
10.1063/1.97436
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