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Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy
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10.1063/1.97471
/content/aip/journal/apl/49/17/10.1063/1.97471
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/17/10.1063/1.97471
/content/aip/journal/apl/49/17/10.1063/1.97471
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/content/aip/journal/apl/49/17/10.1063/1.97471
1986-10-27
2014-08-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/17/10.1063/1.97471
10.1063/1.97471
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