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Elimination of end‐of‐range and mask edge lateral damage in Ge+ preamorphized, B+ implanted Si
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10.1063/1.97382
/content/aip/journal/apl/49/19/10.1063/1.97382
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/19/10.1063/1.97382
/content/aip/journal/apl/49/19/10.1063/1.97382
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/content/aip/journal/apl/49/19/10.1063/1.97382
1986-11-10
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Elimination of end‐of‐range and mask edge lateral damage in Ge+ preamorphized, B+ implanted Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/19/10.1063/1.97382
10.1063/1.97382
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