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Hot‐electron capture to D X centers in Al x Ga1−x As at low Al mole fractions (x<0.2)
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10.1063/1.97276
/content/aip/journal/apl/49/22/10.1063/1.97276
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/22/10.1063/1.97276
/content/aip/journal/apl/49/22/10.1063/1.97276
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/content/aip/journal/apl/49/22/10.1063/1.97276
1986-12-01
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hot‐electron capture to DX centers in AlxGa1−xAs at low Al mole fractions (x<0.2)
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/22/10.1063/1.97276
10.1063/1.97276
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