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Stoichiometry dependence of electrical activation efficiency in Si implanted layers of undoped, semi‐insulating GaAs
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10.1063/1.97292
/content/aip/journal/apl/49/23/10.1063/1.97292
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/23/10.1063/1.97292
/content/aip/journal/apl/49/23/10.1063/1.97292
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/content/aip/journal/apl/49/23/10.1063/1.97292
1986-12-08
2014-09-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stoichiometry dependence of electrical activation efficiency in Si implanted layers of undoped, semi‐insulating GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/23/10.1063/1.97292
10.1063/1.97292
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