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Behavior of inversion layers in 3C silicon carbide
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10.1063/1.97159
/content/aip/journal/apl/49/6/10.1063/1.97159
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/6/10.1063/1.97159
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/content/aip/journal/apl/49/6/10.1063/1.97159
1986-08-11
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Behavior of inversion layers in 3C silicon carbide
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/6/10.1063/1.97159
10.1063/1.97159
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