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Interface traps and P b centers in oxidized (100) silicon wafers
1.E. H. Poindexter, G. J. Gerardi, M.‐E. Rueckel, P. J. Caplan, N. M. Johnson, and D. K. Biegelsen, J. Appl. Phys. 56, 2844 (1984).
2.N. M. Johnson, D. K. Biegelsen, M. D. Moyer, S. T. Chang, E. H. Poindexter, and P. J. Caplan, Appl. Phys. Lett. 43, 563 (1983).
3.P. J. Caplan, E. H. Poindexter, B. E. Deal, and R. R. Razouk, J. Appl. Phys. 50, 5847 (1979).
4.E. H. Poindexter, P. J. Caplan, B. E. Deal, and R. R. Razouk, J. Appl. Phys. 52, 879 (1981).
5.A. H. Edwards, Electronics Technology and Devices Laboratory, Fort Monmouth, NJ 07703, preliminary results.
6.E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982), Chaps. 3, 4, and 8.
7.P. M. Lenahan and P. V. Dressendorfer, Appl. Phys. Lett. 41, 542 (1982).
8.C. Brunstrom and C. Svensson, Solid State Commun. 37, 399 (1981).
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