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Tungsten deposition on porous silicon for formation of buried conductors in single crystal silicon
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10.1063/1.97601
/content/aip/journal/apl/49/7/10.1063/1.97601
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/7/10.1063/1.97601
/content/aip/journal/apl/49/7/10.1063/1.97601
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/content/aip/journal/apl/49/7/10.1063/1.97601
1986-08-18
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tungsten deposition on porous silicon for formation of buried conductors in single crystal silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/49/7/10.1063/1.97601
10.1063/1.97601
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