No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Operation of the Si/CoSi2/Si heterostructure transistor
1.A brief review is given by S. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 184.
2.C. O. Bozler, G. D. Alley, R. A. Murphy, D. C. Flanders, and W. T. Lindley, IEEE International Electron Device Meeting Technical Digest, Washington, DC, 1979, p. 384.
3.S. M. Sze and H. K. Gummel, Solid State Electron. 9, 751 (1966).
4.J. C. Hensel, A. F. J. Levi, R. T. Tung, and J. M. Gibson, Appl. Phys. Lett. 47, 151 (1985).
5.For high‐frequency performance an equally important consideration is the base resistance which is expected to be low, for a 100‐Å‐thick base layer of circular geometry [see J. C. Hensel, R. T. Tung, J. M. Poate, and F. C. Unterwald, Appl. Phys. Lett. 44, 913 (1984)].
6.D. D. Rathman and R. W. Mountain, Proceedings of IEEE 43rd Annual Device Research Conference, Boulder, Colorado, 1985, p. VI B‐3.
7.Specific to the case:
8.J. M. Gibson (private communication).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month