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AN INDUCTIVE EFFECT IN A SURFACE BARRIER Si DIODE CAUSED BY REDUCTION OF CARRIER CONCENTRATION BY γ IRRADIATION1
1.The information contained in this article was developed during the course of work under contract AT (07‐2)‐1 with the U.S. Atomic Energy Commission.
2.Alvin M. Goodman, J. Appl. Phys. 34, 329 (1963).
3.J. H. Crawford, Jr., IEEE Trans. Nucl. Sci. NS‐10, No. 5, 1–10 (1963).
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