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Effect of lattice mismatch in ZnSe epilayers grown on GaAs by molecular beam epitaxy
1.See, for example, R. N. Bhargava, in Proceedings of the 17th International Conference on the Physics of Semiconductors, edited by J. D. Chadi and W. A. Harrison (Springer, New York, 1985), p. 1531 and references therein.
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3.The donor‐acceptor pair lines observed in our MBE samples are much weaker than those reported in ZnSe samples grown by low‐pressure organometallic vapor phase epitaxy [S. Fujita, Y. Matsuda, and A. Sasaki, Appl. Phys. Lett. 47, 955 (1985)].
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