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Index‐guided Al x Ga1−x As‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2) y (GaAs)1−y source
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10.1063/1.98096
/content/aip/journal/apl/50/10/10.1063/1.98096
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/10/10.1063/1.98096
/content/aip/journal/apl/50/10/10.1063/1.98096
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/content/aip/journal/apl/50/10/10.1063/1.98096
1987-03-09
2014-12-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Index‐guided AlxGa1−xAs‐GaAs quantum well heterostructure lasers fabricated by vacancy‐enhanced impurity‐induced layer disordering from an internal (Si2)y(GaAs)1−y source
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/10/10.1063/1.98096
10.1063/1.98096
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