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Electrical properties of thermally stable LaB6/GaAs Schottky diodes
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11.These activation processes were used in our fabrication of GaAs MESFET. After deposition, the second annealing at 750 °C for 20 min was carried out to activate source and drain regions. So we observed the interface after the second annealing to compare to the as‐deposited samples. Precise characteristics of ‐gate self‐aligned GaAs MESFET will be reported elsewhere.
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