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Alternatives to arsine: The atmospheric pressure organometallic chemical vapor deposition growth of GaAs using triethylarsenic
1.To produce stoichiometric GaAs epilayers, a large molar excess of the reagent is required (see Ref. 7).
2.For example, see (a) T. F. Kuech and R. Potemski, Appl. Phys. Lett. 47, 821 (1985);
2.(b) N. Kobayashi and T. Makimoto, Jpn. J. Appl. Phys. 24, L824 (1985);
2.(c) L. M. Fraas, P. S. McLeod, J. A. Cape, and L. D. Partain, J. Cryst. Growth 68, 490 (1984);
2.(d) R. Bhat and V. G. Keramidas, Proc. SPIE‐Int. Soc. Opt. Eng. 323, 104 (1982);
2.(c) Y. Seki and K. Tanno, J. Electrochem. Soc. 122, 1108 (1975).
3.M. Yoshida and H. Watanabe, J. Electrochem. Soc. 132, 677 (1985).
4.For GaAs growth, the and each must decompose to a crucial intermediate, [“GaAs”], where rate of GaAs The rate of [“GaAs”] where is an “effective” decomposition rate constant relating reagent concentration to the formation of the critical intermediate. Since a large excess of is needed for stoichiometric growth of GaAs, must be much smaller than
5.Organometallics for Vapor Phase Epitaxy, Literature and Product Review, Morton Thiokol Inc., Alfa Products, Danvers, MA 1986.
6.R. C. Weast, ed., CRC Handbook of Chemistry and Physics, 64th ed. (CRC, Boca Raton, Florida, 1983), F‐177, p. 179.
7.P. D. Dapkus, H. M. Manasevit, K. L. Hess, T. S. Low, and G. E. Stillman, J. Cryst. Growth 55, 10 (1981).
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