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Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As
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10.1063/1.98083
/content/aip/journal/apl/50/12/10.1063/1.98083
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/12/10.1063/1.98083
/content/aip/journal/apl/50/12/10.1063/1.98083
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/content/aip/journal/apl/50/12/10.1063/1.98083
1987-03-23
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Measurement of heterojunction band offsets by admittance spectroscopy: InP/Ga0.47In0.53As
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/12/10.1063/1.98083
10.1063/1.98083
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