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Tellurium thin‐film transistor deposited on polyester film having plasma polymerized films on double‐layered gate insulators
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10.1063/1.98054
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    Affiliations:
    1 Department of Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
    2 Department of Material Systems Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
    3 Division of Optoelectronics, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
    Appl. Phys. Lett. 50, 818 (1987); http://dx.doi.org/10.1063/1.98054
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/content/aip/journal/apl/50/13/10.1063/1.98054
1987-03-30
2014-12-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tellurium thin‐film transistor deposited on polyester film having plasma polymerized films on double‐layered gate insulators
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/13/10.1063/1.98054
10.1063/1.98054
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