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Effect of i n s i t u and e x s i t u annealing on dislocations in GaAs on Si substrates
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10.1063/1.97956
/content/aip/journal/apl/50/15/10.1063/1.97956
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/15/10.1063/1.97956
/content/aip/journal/apl/50/15/10.1063/1.97956
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/content/aip/journal/apl/50/15/10.1063/1.97956
1987-04-13
2014-08-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of insitu and exsitu annealing on dislocations in GaAs on Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/15/10.1063/1.97956
10.1063/1.97956
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