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Effect of hydrogen on shallow dopants in crystalline silicon
1.See, e.g., S. J. Pearton, J. Electron. Mater. 14a, 737 (1985).
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11.Available theoretical calculations for H in Si are not in agreement about its energy levels. Even the most sophisticated calculations cannot at present determine unambiguously which localized levels are in the gap or inside the bands because of inadequacies in the available prescriptions for calculating the effective single‐particle potential in many‐electron systems [see, e.g., O. Gunnarsson and K. Schoenhammer, Phys. Rev. Lett. 56, 1968 (1986)].
12.This conclusion has been reached independently by M. Capizzi (unpublished).
13.More complex behavior by the diffusing H atom (e.g., change of charge state along the diffusion path, multiple paths, negative U behavior, etc.) is not considered in this paper.
14.L. M. Falicov and E. E. Haller, Solid State Common. 53, 1121 (1985).
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