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Determination of critical layer thickness in In x Ga1−x As/GaAs heterostructures by x‐ray diffraction
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10.1063/1.98004
/content/aip/journal/apl/50/15/10.1063/1.98004
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/15/10.1063/1.98004
/content/aip/journal/apl/50/15/10.1063/1.98004
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/content/aip/journal/apl/50/15/10.1063/1.98004
1987-04-13
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x‐ray diffraction
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/15/10.1063/1.98004
10.1063/1.98004
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