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Ohmic contacts to n‐type GaAs using high‐temperature rapid thermal annealing for self‐aligned processing
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10.1063/1.97903
/content/aip/journal/apl/50/17/10.1063/1.97903
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/17/10.1063/1.97903
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/content/aip/journal/apl/50/17/10.1063/1.97903
1987-04-27
2014-07-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ohmic contacts to n‐type GaAs using high‐temperature rapid thermal annealing for self‐aligned processing
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/17/10.1063/1.97903
10.1063/1.97903
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