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Effect of oxide field on hot‐carrier‐induced degradation of metal‐oxide‐semiconductor field‐effect transistors
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10.1063/1.97906
/content/aip/journal/apl/50/17/10.1063/1.97906
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/17/10.1063/1.97906
/content/aip/journal/apl/50/17/10.1063/1.97906
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/content/aip/journal/apl/50/17/10.1063/1.97906
1987-04-27
2014-12-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of oxide field on hot‐carrier‐induced degradation of metal‐oxide‐semiconductor field‐effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/17/10.1063/1.97906
10.1063/1.97906
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