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Activation characteristics and defect structure in Si‐implanted GaAs‐on‐Si
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10.1063/1.97949
/content/aip/journal/apl/50/17/10.1063/1.97949
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/17/10.1063/1.97949
/content/aip/journal/apl/50/17/10.1063/1.97949
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/content/aip/journal/apl/50/17/10.1063/1.97949
1987-04-27
2014-08-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Activation characteristics and defect structure in Si‐implanted GaAs‐on‐Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/17/10.1063/1.97949
10.1063/1.97949
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