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Response to ‘‘Comment on ‘Temperature dependence of electrical properties of non‐doped and nitrogen‐doped beta‐SiC single crystals grown by chemical vapor deposition’ ’’ [Appl. Phys. Lett. 5 0, 1533 (1987)]
1.B. Segall, S. A. Alterovitz, E. J. Haugland, and L. G. Matus, Appl. Phys. Lett. 50, 1533 (1987).
2.A. Suzuki, A. Uemoto, M. Shigcta, K. Furukawa, and S. Nakajima, Appl. Phys. Lett. 49, 450 (1986).
3.B. Segall, S. A. Alterovitz, F. J. Haugland, and L. G. Matus, Appl. Phys. Lett. 49, 584 (1986).
4.The value of 0.31 that Segall et al. pointed out is that for multiple band minima expressed as which was not clearly shown in our previous Japanese report [Tech. Res. Rept. Inst. Elect. Commun. Eng. (Japan), SSD85‐157, p. 27 (1985) by A. Uemoto, M. Shigeta, K. Furukawa, A. Suzuki, and S. Nakajima].
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