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New approach to the kinetics of silicon vapor phase epitaxy at reduced temperature
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10.1063/1.97785
/content/aip/journal/apl/50/22/10.1063/1.97785
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/22/10.1063/1.97785
/content/aip/journal/apl/50/22/10.1063/1.97785
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/content/aip/journal/apl/50/22/10.1063/1.97785
1987-06-01
2014-07-12
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: New approach to the kinetics of silicon vapor phase epitaxy at reduced temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/22/10.1063/1.97785
10.1063/1.97785
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