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Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy
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10.1063/1.97730
/content/aip/journal/apl/50/24/10.1063/1.97730
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/24/10.1063/1.97730
/content/aip/journal/apl/50/24/10.1063/1.97730
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/content/aip/journal/apl/50/24/10.1063/1.97730
1987-06-15
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Secondary ion mass spectrometry study of oxygen accumulation at GaAs/AlGaAs interfaces grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/24/10.1063/1.97730
10.1063/1.97730
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