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Comment on ‘‘X‐ray photoemission core level determination of the GaSb/AlSb heterojunction valence‐band discontinuity’’[Appl. Phys. Lett. 4 9, 1037 (1986)]
1.G. J. Gualtieri, G. P. Schwartz, R. G. Nuzzo, and W. A. Sunder, Appl. Phys. Lett. 49, 1037 (1986).
2.See, e.g., S. P. Kowalczyk, J. T. Cheung, E. A. Kraut, and R. W. Grant, Phys. Rev. Lett. 56, 1605 (1986).
3.R. L. Johnson, J. H. Fock, L. Ley, and M. Cardona, Proceedings of the 17th International Conference on the Physics of Semiconductors (Springer, New York, 1984), p. 1239.
4.S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969), p. 397.
5.R. H. Williams, in Proceedings of the 17th International Conference on the Physics of Semiconductors (Springer, New York, 1984), p. 175 and references therein.
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