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Low pressure metalorganic vapor phase epitaxy of InP using a trimethylindium‐trimethylphosphine adduct source
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10.1063/1.97703
/content/aip/journal/apl/50/25/10.1063/1.97703
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/25/10.1063/1.97703
/content/aip/journal/apl/50/25/10.1063/1.97703
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/content/aip/journal/apl/50/25/10.1063/1.97703
1987-06-22
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low pressure metalorganic vapor phase epitaxy of InP using a trimethylindium‐trimethylphosphine adduct source
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/25/10.1063/1.97703
10.1063/1.97703
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