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Interaction of hydrogen and thermal donor defects in silicon
1.Recent review articles on thermal donors appear in Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon 1985, edited by J. C. Mikkelsen, S. J. Pearton, J. W. Corbett, and S. J. Pennycook, Proc. Mater. Res. Soc. 59, 83–138 (1986).
2.For a recent review of oxygen‐related thermal donor models, see A. Bourret, J. Electron. Mater. 14a, 129 (1984).
3.R. C. Newman, J. Phys. C 18, L967 (1985).
4.B. Pajot, H. Compain, J. Lerouille, and B. Clerjaud, Physica B 117&118, 130 (1983).
5.R. Oeder and P. Wagner, in Defects in Semiconductors II, edited by S. Mahajan and J. W. Corbett (North‐Holland, New York, 1983), p. 171.
6.L. C. Kimerling and J. L. Benton, Appl. Phys. Lett. 39, 410 (1981).
7.S. J. Pearton, J. Electron. Mater. 14a, 737 (1984).
8.S. J. Pearton, A. Chantre, L. C. Kimerling, K. D. Cummings, and W. C. Dautremout‐Smith, Proc. Mater. Res. Soc. 59, 475 (1986).
9.N. M. Johnson and S. K. Hahn, Appl. Phys. Lett. 48, 709 (1986).
10.A. Ourmazd, A. Bourret, and W. Schröter, J. Appl. Phys. 56, 1670 (1984).
11.M. Stavola and L. C. Snyder, in Defects in Silicon, edited by W. M. Bullis and L. C. Kimerling (Electrochemical Society, Pennington, NJ, 1983), p. 61.
12.N. M. Johnson, C. Herring, and D. J. Chadi, Phys. Rev. Lett. 56, 769 (1986).
13.In Ref. 7, the restoration of the thermal donor (TD) electrical activity was studied using spreading resistance in material with very high TD concentration A 400 °C reactivation temperature was determined. We have been unable to reproduce these data in samples with much lower TD concentration. The source of these differences has not been determined.
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