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Synchrotron‐radiation‐induced surface nitridation of silicon at room temperature
1.A. Wilson, SPIE Proc. 537, 85 (1985).
2.A. C. Adams, in VLSI Technology, edited by S. M. Sze (McGraw‐Hill, New York, 1983).
3.See, for example, Advanced Processing of Electronic Materials in the United States and Japan (National Academy, Washington, 1986).
4.For a review of synchrotron radiation photoemission, see G. Margaritondo and J. H. Weaver, in Methods of Experimental Physics, Vol. 22: Solid State Physics—Surfaces, edited by R. L. Park and M. J. Lagally (Academic, New York, 1985), Chap. 3.
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