Full text loading...
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Synchrotron‐radiation‐induced surface nitridation of silicon at room temperature
1.A. Wilson, SPIE Proc. 537, 85 (1985).
2.A. C. Adams, in VLSI Technology, edited by S. M. Sze (McGraw‐Hill, New York, 1983).
3.See, for example, Advanced Processing of Electronic Materials in the United States and Japan (National Academy, Washington, 1986).
4.For a review of synchrotron radiation photoemission, see G. Margaritondo and J. H. Weaver, in Methods of Experimental Physics, Vol. 22: Solid State Physics—Surfaces, edited by R. L. Park and M. J. Lagally (Academic, New York, 1985), Chap. 3.
5.F. Boszo and Ph. Avouris, Phys. Rev. Lett. 57, 1185 (1986).
6.C. Maillot, K. Roulet, and G. Dufour, J. Vac. Sci. Technol. B 2, 316 (1984).
7.A. D. Katnani, P. Perfetti, Te‐Xiu Zhao, and G. Margaritondo, Appl. Phys. Lett. 40, 619 (1982).
Article metrics loading...