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Very high transconductance InGaAs/InP junction field‐effect transistor with submicrometer gate
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10.1063/1.98151
/content/aip/journal/apl/50/9/10.1063/1.98151
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/9/10.1063/1.98151
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/content/aip/journal/apl/50/9/10.1063/1.98151
1987-03-02
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Very high transconductance InGaAs/InP junction field‐effect transistor with submicrometer gate
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/9/10.1063/1.98151
10.1063/1.98151
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