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Ga0.47In0.53As/InP superlattices grown by chemical beam epitaxy: Absorption, photoluminescence excitation, and photocurrent spectroscopies
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10.1063/1.98153
/content/aip/journal/apl/50/9/10.1063/1.98153
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/9/10.1063/1.98153
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/content/aip/journal/apl/50/9/10.1063/1.98153
1987-03-02
2014-08-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ga0.47In0.53As/InP superlattices grown by chemical beam epitaxy: Absorption, photoluminescence excitation, and photocurrent spectroscopies
http://aip.metastore.ingenta.com/content/aip/journal/apl/50/9/10.1063/1.98153
10.1063/1.98153
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