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Annealing induced strain in 3 1P+‐implanted Si (111) and Si (100)
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10.1063/1.98855
/content/aip/journal/apl/51/10/10.1063/1.98855
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/10/10.1063/1.98855
/content/aip/journal/apl/51/10/10.1063/1.98855
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/content/aip/journal/apl/51/10/10.1063/1.98855
1987-09-07
2014-11-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Annealing induced strain in 31P+‐implanted Si (111) and Si (100)
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/10/10.1063/1.98855
10.1063/1.98855
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