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Variation of the critical layer thickness with In content in strained In x Ga1 x As‐GaAs quantum wells grown by molecular beam epitaxy
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10.1063/1.98856
/content/aip/journal/apl/51/10/10.1063/1.98856
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/10/10.1063/1.98856
/content/aip/journal/apl/51/10/10.1063/1.98856
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/content/aip/journal/apl/51/10/10.1063/1.98856
1987-09-07
2014-10-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/10/10.1063/1.98856
10.1063/1.98856
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