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Effect of As overpressure during annealing on the nonuniformity of activation efficiency in Si‐implanted GaAs layer
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10.1063/1.98857
/content/aip/journal/apl/51/10/10.1063/1.98857
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/10/10.1063/1.98857
/content/aip/journal/apl/51/10/10.1063/1.98857
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/content/aip/journal/apl/51/10/10.1063/1.98857
1987-09-07
2014-11-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of As overpressure during annealing on the nonuniformity of activation efficiency in Si‐implanted GaAs layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/10/10.1063/1.98857
10.1063/1.98857
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