No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Reactive ion etch process with highly controllable GaAs‐to‐AlGaAs selectivity using SF6 and SiCl4
1.K. Hikosaka, T. Mimura, and K. Joshin, Jpn. J. Appl. Phys. 20, L847 (1981).
2.C. M. Knoedler and T. F. Kuech, J. Vac. Sci. Technol. B 4, 1233 (1986).
3.J. Vatus, J. Chevrier, P. Delescluse, and J. F. Rochette, IEEE Trans. Electron Devices ED‐33, 934 (1986).
4.B. J. F. Lin, S. Kofol, C. Kocot, H. Luechinger, J. N. Miller, D. E. Mars, B. White, and E. Littau, Technical Digest of IEEE Gallium Arsenide Integrated Circuit Symposium, Oct. 28–30, 1986, Grenelefe. FL (Piscataway, NJ, 1986), p. 51.
5.K. L. Seaward, N. J. Moll, D. J. Coulman, and W. F. Stickle, J. Appl. Phys. 61, 2358 (1987).
Article metrics loading...
Full text loading...
Most read this month
Most cited this month