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Temperature dependence of hydrogen vibrational modes in passivated boron‐doped silicon
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11.G. R. Bai, M. W. Qi, L. M. Xie, and T. S. Shi, Solid State Commun. 56, 277 (1985). The unexpectedly large temperature shift of the hydrogen vibration frequency in boron‐doped Si also allows a comment on the accuracy of the theoretical calculations in Refs. 6 and 7. Both calculations yielded frequencies within of the then published value at room temperature However, it is not clear why these calculations should reproduce the RT frequency rather than, for example, the low‐temperature limit of
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