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Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurements
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10.1063/1.98648
/content/aip/journal/apl/51/18/10.1063/1.98648
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/18/10.1063/1.98648
/content/aip/journal/apl/51/18/10.1063/1.98648
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/content/aip/journal/apl/51/18/10.1063/1.98648
1987-11-02
2014-11-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact ionization coefficient ratio in InGaAs/InAlAs superlattice avalanche photodiodes determined from noise measurements
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/18/10.1063/1.98648
10.1063/1.98648
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