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Characterization of short‐range leakage currents in undoped polycrystalline Si by means of capacitance‐voltage measurement
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10.1063/1.98623
/content/aip/journal/apl/51/19/10.1063/1.98623
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/19/10.1063/1.98623
/content/aip/journal/apl/51/19/10.1063/1.98623
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/content/aip/journal/apl/51/19/10.1063/1.98623
1987-11-09
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of short‐range leakage currents in undoped polycrystalline Si by means of capacitance‐voltage measurement
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/19/10.1063/1.98623
10.1063/1.98623
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