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Effectiveness of strained‐layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates
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10.1063/1.98570
/content/aip/journal/apl/51/20/10.1063/1.98570
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/20/10.1063/1.98570
/content/aip/journal/apl/51/20/10.1063/1.98570
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/content/aip/journal/apl/51/20/10.1063/1.98570
1987-11-16
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effectiveness of strained‐layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/20/10.1063/1.98570
10.1063/1.98570
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