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Characteristics of Si‐doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source
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10.1063/1.98579
/content/aip/journal/apl/51/20/10.1063/1.98579
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/20/10.1063/1.98579
/content/aip/journal/apl/51/20/10.1063/1.98579
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/content/aip/journal/apl/51/20/10.1063/1.98579
1987-11-16
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of Si‐doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/20/10.1063/1.98579
10.1063/1.98579
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