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Comment on ‘‘Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers’’ [Appl. Phys. Lett. 4 9, 1257 (1986)]
1.T. Won, G. Munns, R. Houdŕ, and H. Morkoç, Appl. Phys. Lett. 49, 1257 (1986).
2.A. G. Milnes and D. L. Feucht, Heterojuctions and Metal‐Semiconductor Junctions (Academic, New York, 1972).
3.H. Kroemer, in VLSI Electronics Microstructure Science, edited by N. G. Einspruch (Academic, New York, 1985), Vol. 10, pp. 152–155.
4.H. Kroemer, J. Cryst. Growth 81, 193 (1987).
5.T. Won, G. Munns, M. S. Unlu, H. Unlu, J. Chyi, and H. Morkoç, J. Appl. Phys. 62, 3860 (1987).
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