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Double‐crystal x‐ray topographic determination of local strain in metal‐oxide‐semiconductor device structures
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10.1063/1.98483
/content/aip/journal/apl/51/22/10.1063/1.98483
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/22/10.1063/1.98483
/content/aip/journal/apl/51/22/10.1063/1.98483
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/content/aip/journal/apl/51/22/10.1063/1.98483
1987-11-30
2014-10-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Double‐crystal x‐ray topographic determination of local strain in metal‐oxide‐semiconductor device structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/51/22/10.1063/1.98483
10.1063/1.98483
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